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China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

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China 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
China 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

  1. China 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
  2. China 3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics

  1. MOQ: 1pcs
  2. Price: By required
  3. Get Latest Price
Supply Ability 100pcs/months
Delivery Time 15days
Packaging Details Packaged in a class 100 clean room environment, in cassettes of single wafer containers
material sic crystal
industry semiconductor wafer
application semiconductor, Led, device, power electronics,5G
color blue, green, white
type 4H,6H, DOPED, no doped, high purity
Brand Name zmkj
Model Number 4inch--semi high purity
Place of Origin china

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  1. Product Details
  2. Company Details

Product Specification

Supply Ability 100pcs/months Delivery Time 15days
Packaging Details Packaged in a class 100 clean room environment, in cassettes of single wafer containers material sic crystal
industry semiconductor wafer application semiconductor, Led, device, power electronics,5G
color blue, green, white type 4H,6H, DOPED, no doped, high purity
Brand Name zmkj Model Number 4inch--semi high purity
Place of Origin china
High Light sic wafersic substrate

3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​

 

Application areas

 

1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET

 

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

 

advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

 

 

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

 

Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

2. substrates size of standard

 

3 inch Diameter 4H Silicon Carbide Substrate Specifications
SUBSTRATE PROPERTY Ultra Grade Production Grade Research Grade Dummy Grade
Diameter 76.2 mm ±0.38 mm
Surface Orientation on-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5°
Primary Flat Orientation <11-20> ± 5.0 ̊
Secondary Flat Orientation 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length 22.0 mm ± 2.0 mm
Secondary Flat Length 11.0 mm ± 1.5mm
Wafer Edge Chamfer
Micropipe Density ≤1 micropipes/ cm2 ≤5 micropipes/ cm2 ≤10 micropipes/ cm2 ≤50 micropipes/ cm2
Polytype areas by high-intensity light None permitted ≤10% area
Resistivity 0.015 Ω·cm~0.028 Ω·cm (area 75%)0.015Ω·cm~0.028 Ω·cm
Thickness 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV ≤10 μm ≤15 μm
Bow(absolute value) ≤15 μm ≤25 μm
Warp ≤35 μm

3.sample 

 

 

FAQ:

Q: What's the way of shipping and cost and pay term ?

A:(1) We accept100% T/T In advance by  DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 2pcs.

(2) For customized products, the MOQ is 25pcs up.

 

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size  based on your needs.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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