China factories

China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

Leave a Message

we will call you back quickly!

Submit Requirement
China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application
China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application

  1. China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application
  2. China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application
  3. China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application
  4. China 4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application

4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application

  1. MOQ: 1pcs
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T, Western Union
Supply Ability 100pcs
Delivery Time 2-4weeks
Packaging Details single wafer container or 25pcs cassettle box
materials silicon substrate
epi layer thickness 2-7um
Material Gallium Nitride Wafer
Traditional manufacturing using Molecular beam epitaxy
moq 1pcs
Size 4inch/6inch/8inch/12inch
application Micro-LED application
Electronic usage electronics,high-speed switching circuits,infrared circuits
Brand Name ZMSH
Model Number 6/8/12INCH GaN-ON-silicon
Certification rohs
Place of Origin CHINA

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union Supply Ability 100pcs
Delivery Time 2-4weeks Packaging Details single wafer container or 25pcs cassettle box
materials silicon substrate epi layer thickness 2-7um
Material Gallium Nitride Wafer Traditional manufacturing using Molecular beam epitaxy
moq 1pcs Size 4inch/6inch/8inch/12inch
application Micro-LED application Electronic usage electronics,high-speed switching circuits,infrared circuits
Brand Name ZMSH Model Number 6/8/12INCH GaN-ON-silicon
Certification rohs Place of Origin CHINA
High Light GaN Silicon Substrate4 Inch Gallium Arsenide WaferSemiconductor Substrates For RF Application

8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR POWER RF  Micro-LED application

8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application

 

GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium nitride (GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap.


Introduction
There is a growing need for energy saving and advancements in information and communication systems. To meet these needs, we have developed a wide-bandgap semiconductor substrate with gallium nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon substrates, we can produce large, inexpensive semiconductor substrates for next-generation devices

.
Target: For home appliances: switchgears and inverters with breakdown voltages in the hundreds. For mobile phone base stations: high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than other silicon carbide or sapphire substrates, and we can provide GaN devices tailored to customer requirements.


Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in a crystal that does not contain electrons (semiconductor materials with a band gap larger than silicon are often referred to as wide band gap semiconductors). Wide-bandgap material with good optical transparency and high electrical breakdown voltage


Heterojunction
is a stack of different materials. Generally speaking, in the semiconductor field, relatively thin films of semiconductor materials with different compositions are stacked. In the case of mixed crystals, heterojunctions with atomically smooth interfaces and good interface properties are obtained. Due to these interfaces, a layer of two-dimensional electron gas with high electron mobility is created

 

Specs for  GaN-on-Si Power application Epi-wafers
 
Product Specification
Items                                                       Values/Scope
Substrate                                                           Si
Wafer diameter                        100mm,150mm,200mm,300mm
Epi-layer thickness                                   2-7 μm
Wafer bow                                    <30 μm, Typical
Surface Morphology                    RMS<0.5nm in 5×5 μm²
Barrier                                        AlXGa1-XN, 0<X<1
Cap layer                      In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density                       >9E12/cm2 (20nm Al0.25GaN, 150mm)
Electron mobility              >1800 cm2 /Vs (20nm Al0.25GaN, 150mm)
 
F Specs for GaN-on-Si RF application Epi-wafersApplicems Values/Scope
Substrate                                                     HR_Si / SiC
Wafer diameter                               100mm, 150mm for SiC,
                                                  100mm, 150mm, 200mm for HR_Si
Epi-layer thickness                                       2-3 μm
Wafer bow                                              <30 μm, Typical
Surface Morphology                          RMS<0.5nm in 5×5 μm²
Barrier                                        AlGaN or AlN or InAlN
Cap layer                                       In-situ SiN or GaN
 
• Core technical team members all have 10+ years experience in GaN
Capacity
• 3300m2 class 1000 cleanroom
• 200k pcs/year for 150mm GaN epiwafers
Product
Diversity
• GaN-on-Si (up to 300mm)
• GaN-on-SiC (up to 150mm)
• GaN-on-HR_Si (up to 200mm)
• GaN-on-Sapphire (up to 150mm)
• GaN-on-GaN
IP & Quality • ~400 patent filed in China, US, Japan etc.
with >100 granted
• License of ~80 patents from imec
• ISO9001:2015 certificate for design and
manufacture of GaN epi material
 

FAQ:

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs.

(2) For customized products, the MOQ is 5pcs up.

 

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

 

Q: What's the delivery time?

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

 

Q: Do you have standard products?

A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.

Q: How to pay?

A:50%deposit, left before delivery T/T,

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and optical coating for your optical

components based on your needs.

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

+ Read More

Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement