Payment Terms | T/T, Western Union |
Supply Ability | 100pcs |
Delivery Time | 2-4weeks |
Packaging Details | single wafer container or 25pcs cassettle box |
Purity | 99.9% |
Application | low temperature alloys |
Einecs no. | 247-129-0 |
Grade standard | Industrial Grade |
Mf | GaN |
Cas no. | 25617-97-4 |
Brand Name | ZMSH |
Model Number | 6/8/12INCH GaN-ON-silicon |
Certification | rohs |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T, Western Union | Supply Ability | 100pcs |
Delivery Time | 2-4weeks | Packaging Details | single wafer container or 25pcs cassettle box |
Purity | 99.9% | Application | low temperature alloys |
Einecs no. | 247-129-0 | Grade standard | Industrial Grade |
Mf | GaN | Cas no. | 25617-97-4 |
Brand Name | ZMSH | Model Number | 6/8/12INCH GaN-ON-silicon |
Certification | rohs | Place of Origin | CHINA |
High Light | Industrial Grade Si Epi Wafer ,GaN Si Epi Wafer ,Power RF Aluminum Nitride Substrates |
8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application
GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium nitride (GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap.
Introduction
There is a growing need for energy saving and advancements in information and communication systems. To meet these needs, we have developed a wide-bandgap semiconductor substrate with gallium nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon substrates, we can produce large, inexpensive semiconductor substrates for next-generation devices
.
Target: For home appliances: switchgears and inverters with breakdown voltages in the hundreds. For mobile phone base stations: high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than other silicon carbide or sapphire substrates, and we can provide GaN devices tailored to customer requirements.
Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in a crystal that does not contain electrons (semiconductor materials with a band gap larger than silicon are often referred to as wide band gap semiconductors). Wide-bandgap material with good optical transparency and high electrical breakdown voltage
Heterojunction
is a stack of different materials. Generally speaking, in the semiconductor field, relatively thin films of semiconductor materials with different compositions are stacked. In the case of mixed crystals, heterojunctions with atomically smooth interfaces and good interface properties are obtained. Due to these interfaces, a layer of two-dimensional electron gas with high electron mobility is created
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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