SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | In 30 days |
| Packaging Details | Customized Box |
| Material | HPSI 4h-Semi SIC |
| Grade | D |
| Diameter | 150± 0.2mm |
| Thickness | 500±25μm |
| LTV | ≤10μm(5mm*5mm) |
| TTV | ≤20μm |
| Bow | -45μm~45μm |
| Warp | ≤55μm |
| Resistivity | 70% area＞1E5ohm·cm |
| Brand Name | ZMSH |
| Model Number | 4H-Semi SIC |
| Certification | ROHS |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Delivery Time | In 30 days |
| Packaging Details | Customized Box | Material | HPSI 4h-Semi SIC |
| Grade | D | Diameter | 150± 0.2mm |
| Thickness | 500±25μm | LTV | ≤10μm(5mm*5mm) |
| TTV | ≤20μm | Bow | -45μm~45μm |
| Warp | ≤55μm | Resistivity | 70% area＞1E5ohm·cm |
| Brand Name | ZMSH | Model Number | 4H-Semi SIC |
| Certification | ROHS | Place of Origin | China |
| High Light | Dummy Grade Semiconductor Wafers ，Silicon 4H-Semi SIC Substrate ，LED Semiconductor Wafers | ||
Description:
Semi-Insulating 4H-SiC (semi-insulating 4H-SIC) is a special type of silicon carbide material. In the crystal structure, 4H-semiconductor SIC has semiconductor properties, while semi-insulated 4H-semiconductor silicon carbide has higher resistance characteristics, showing properties similar to insulators. Semi-insulated 4H-semiconductor silicon carbide has important applications in semiconductor device manufacturing, esp. in high power and high temperature applications. Due to its higher resistance properties, semi-insulated silicon carbide can be used as a resistor, isolation layer, or substrates to help reduce current interconnection and interference between devices."4H" indicates the crystal structure of silicon carbide. 4H-silicon-carbide is a form of crystal structure in which silicon and carbon atoms to form a stable crystal structure.
Features:
| Features | Descriptions |
| High-temperature property | 4H-semiconductor silicon carbide has excellent high temperature characteristics and can work in high temperature environments. |
| High pressure resistance | 4H- semiconductor silicon carbide has high breakdown electric field strength and voltage resistance. This makes it suitable for high voltage applications such as power electronics. |
| High requency response | 4H-semiconductor silicon carbide has high electron mobility and low capacitance characteristics, enabling high-speed switching and low-loss power conversion. |
| Low on-off loss | 4H-semi SIC has a low on-off loss, that is, less energy loss in the conductive state, reducing heat loss in energy conversion. |
| High radiation resistance | 4H-semi SIC has a high resistance to radiation and can maintain stable performance in high radiation environments. |
| Good thermal conductivity | 4H-semi SIC has good thermal conductivity and can effectively transfer and disperse heat. |
| High chemical resistance | 4H-semi SIC has high resistance to chemical corrosion and oxidation to maintain stable performance in harsh environments. |
Technical Parameters:
|
| Production | Research | Dummy |
| Type | 4H | 4H | 4H |
| Resistivity(ohm·cm) | ≥1E9 | 100% area＞1E5 | 70% area＞1E5 |
| Diameter | 150± 0.2mm | 150± 0.2mm | 150± 0.2mm |
| Thickness | 500±25μm | 500±25μm | 500±25μm |
| Axis | <0001> | <0001> | <0001> |
| TTV | ≤5μm | ≤10μm | ≤20μm |
| LTV(5mm*5mm) | ≤3μm | ≤5μm | ≤10μm |
| Bow | -25μm~25μm | -35μm~35μm | -45μm~45μm |
| Warp | ≤35μm | ≤45μm | ≤55μm |
| Ra(5um*5um) | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
| Micropipe Density | ≤1ea/cm2 | ≤10ea/cm2 | ≤15ea/cm2 |
1. High purity 4H-semi SIC substrate can be used in power electronic devices.
2. High purity 4H-semi SIC can be used to manufacture optoelectronic devices.
3. High purity 4H-semi SIC can be used as high-frequency power amplifiers devices.
4. High purity 4H-semi SIC can be used can be used to manufacture efficient solar cells.
5. High purity 4H-semi SIC can be used to manufacture LED (light emitting diode) devices.
6. High purity 4H-semi SIC has important applications in high temperature electronic devices.
7. High purity 4H-semi SIC can be used can be used to manufacture various types of sensors
FAQ:
Q: What is the Certification of HPSI 4h-semi SIC?
A: The Certification of HPSI 4h-semi SIC is ROHS.
Q: What is the Brand Name of HPSI 4h-semi SIC?
A: The Brand Name of HPSI 4h-semi SICis ZMSH.
Q: Where is the Place of Origin of HPSI 4h-semi SIC?
A: The Place of Origin of HPSI 4h-semi SIC is CHINA.
Q: What is the MOQ of HPSI 4h-semi SIC at one time?
A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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