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ChongMing Group (HK) Int'l Co., Ltd

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China MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip
China MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip

  1. China MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip

MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8500pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description SDRAM - DDR Memory IC 128Mbit Parallel 167 MHz 700 ps 66-TSOP
VDD +2.5V ±0.2V
VDDQ +2.5V ±0.2V
I/O 2.5V
package FBGA package available
Clock 167 MHz
data rate 333 Mb/s/p
Brand Name
Model Number MT46V8M16
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8500pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description SDRAM - DDR Memory IC 128Mbit Parallel 167 MHz 700 ps 66-TSOP VDD +2.5V ±0.2V
VDDQ +2.5V ±0.2V I/O 2.5V
package FBGA package available Clock 167 MHz
data rate 333 Mb/s/p Brand Name
Model Number MT46V8M16 Certification new & original
Place of Origin original factory
High Light integrated circuit icintegrated circuit components

 

DOUBLE DATA RATE (DDR) SDRAM

 

FEATURES

• 167 MHz Clock, 333 Mb/s/p data rate

• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte)

• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data (x16 has two - one per byte)

• Programmable burst leCM GROUPhs: 2, 4, or 8

• Concurrent Auto Precharge option supported

• Auto Refresh and Self Refresh Modes

• FBGA package available

• 2.5V I/O (SSTL_2 compatible)

• t RAS lockout (t RAP = t RCD)

• Backwards compatible with DDR200 and DDR266

 

OPTIONS                                                   PART NUMBER

• Configuration

  32 Meg x 4 (8 Meg x 4 x 4 banks)                 32M4

  16 Meg x 8 (4 Meg x 8 x 4 banks)                 16M8

   8 Meg x 16 (2 Meg x 16 x 4 banks)              8M16

• Plastic Package

  66-Pin TSOP (OCPL)                                    TG

  60-Ball FBGA (16x9mm)                                FJ

• Timing - Cycle Time

  6ns @ CL = 2.5 (DDR333B–FBGA)1             -6

  6ns @ CL = 2.5 (DDR333B–TSOP)1             -6T

  7.5ns @ CL = 2 (DDR266A)2                                -75Z

• Self Refresh

  Standard                                                       none

 

NOTE: 1. Supports PC2700 modules with 2.5-3-3 timing

             2. Supports PC2100 modules with 2-3-3 timing

 

DDR333 COMPATIBILITY

DDR333 meets or surpasses all DDR266 timing requirements thus assuring full backwards compatibility with current DDR designs. In addition, these devices support concurrent auto-precharge and t RAS lockout for improved timing performance. The 128Mb, DDR333 device will support an (t REFI) average periodic refresh interval of 15.6µs.

The standard 66-pin TSOP package is offered for point-to-point applications where the FBGA package is intended for the multi-drop systems.

The Micron 128Mb data sheet provides full specifications and functionality unless specified herein.

 

FBGA 60-BALL PACKAGE DIMENSION

 

 

FBGA PACKAGE MARKING

Due to the physical size of the FBGA package, the full ordering part number is not printed on the package. Instead the following package code is utilized.

 

Top mark contains five fields        12345

• Field 1 (Product Family)

  DRAM                                          D

  DRAM                                          - ES Z

• Field 2 (Product Type)

  2.5 Volt, DDR SDRAM, 60-ball     L

• Field 3 (Width)

  x4 devices                                    B

  x8 devices                                    C

  x16 devices                                  D

• Field 4 (Density / Size)

  128Mb                                          F

• Filed 5 (Speed Grade)

  -6                                                  J

  -75Z                                              P

  -75                                                F

  -8                                                  C

 

  66-PIN TSOP PACKAGE DIMENSION             66-PIN TSOP PACKAGE PIN ASSIGMENT

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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