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China factory - ChongMing Group (HK) Int'l Co., Ltd

ChongMing Group (HK) Int'l Co., Ltd

  • China,Shenzhen
  • Active Member

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China IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFETÂ
China IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFETÂ

  1. China IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFETÂ

IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFETÂ

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8100pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB
Continuous Drain Current, VGS @ 10V 21 A
Pulsed Drain Current 124 A
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V
Peak Diode Recovery dv/dt 2.1 V/ns
Brand Name
Model Number IRFB31N20DPBF
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8100pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB Continuous Drain Current, VGS @ 10V 21 A
Pulsed Drain Current 124 A Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V Peak Diode Recovery dv/dt 2.1 V/ns
Brand Name Model Number IRFB31N20DPBF
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

HEXFET Power MOSFET

 

VDSS RDS(on) max ID
200V 0.082Ω 31A

 

Applications

  • High Frequency DC-DC converters 
  • Lead-Free

Benefits

  • Low Gate to Drain to Reduce Switching Losses 
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) 
  • Fully Characterized Avalanche Voltage and Current

 

 

Absolute Maximum Ratings

  Parameter Max. Unit
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31‡ A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current  124 A
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 2.1 V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

 

 

Stock Offer (Hot Sell)

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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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Get in touch with us

  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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