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ChongMing Group (HK) Int'l Co., Ltd

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China MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti
China MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti

  1. China MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti

MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8400pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description IGBT
Collector–Emitter Voltage 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) 1200 Vdc
Gate–Emitter Voltage — Continuous ± 20 Vdc
Total Power Dissipation @ TC = 25°C 125 Watts
Operating and Storage Junction Temperature Range –55 to 150 °C
Short Circuit Withstand Time 10 μs
Brand Name
Model Number MGW12N120D
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8400pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description IGBT Collector–Emitter Voltage 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) 1200 Vdc Gate–Emitter Voltage — Continuous ± 20 Vdc
Total Power Dissipation @ TC = 25°C 125 Watts Operating and Storage Junction Temperature Range –55 to 150 °C
Short Circuit Withstand Time 10 μs Brand Name
Model Number MGW12N120D Certification new & original
Place of Origin original factory
High Light npn smd transistorsilicon power transistors

 
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
 
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
 
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
 
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
 
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Collector–Emitter Voltage VCES 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc
Gate–Emitter Voltage — Continuous VGE ± 20 Vdc

Collector Current — Continuous @ TC = 25°C

                            — Continuous @ TC = 90°C

                                — Repetitive Pulsed Current (1)

IC25

IC90

ICM

20

12

40

Vdc

 

Apk

Total Power Dissipation @ TC = 25°C

                 Derate above 25°C

PD

125

0.98

Watts

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C

Short Circuit Withstand Time

(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

tsc 10 μs

Thermal Resistance — Junction to Case – IGBT

                                 — Junction to Case – Diode

                        — Junction to Ambient

RθJC

RθJC

RθJA

1.0

1.4

45

°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C
Mounting Torque, 6–32 or M3 screw 10 lbf*in (1.13 N*m)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
 
PACKAGE DIMENSIONS

 
 
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Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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