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ChongMing Group (HK) Int'l Co., Ltd

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China 2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching
China 2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching

  1. China 2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching

2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 9600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92
collector-base voltage −40 V
collector-emitter voltage −40 V
emitter-base voltage −6 V
total power dissipation 500 mW
storage temperature −65 to +150 °C
operating ambient temperature −65 to +150 °C
Brand Name
Model Number 2N3906
Certification new & original
Place of Origin original factory

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  1. Product Details
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Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 9600pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92 collector-base voltage −40 V
collector-emitter voltage −40 V emitter-base voltage −6 V
total power dissipation 500 mW storage temperature −65 to +150 °C
operating ambient temperature −65 to +150 °C Brand Name
Model Number 2N3906 Certification new & original
Place of Origin original factory
High Light power mosfet icmulti emitter transistor

 
PNP switching transistor 2N3906
 
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
 
APPLICATIONS
• High-speed switching in industrial applications.
 
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904.
 
PINNING

PINDESCRIPTION
1collector
2base
3emitter

 
 
 
 
 
 
 
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VCBOcollector-base voltageopen emitter−40V
VCEOcollector-emitter voltageopen base−40V
VEBOemitter-base voltageopen collector−6V
ICcollector current (DC) −200mA
ICMpeak collector current −300mA
IBMpeak base current −100mA
Ptottotal power dissipationTamb ≤ 25 °C500mW
Tstgstorage temperature −65+150°C
Tjjunction temperature 150°C
Tamboperating ambient temperature −65+150°C

 

Fig.2 DC current gain; typical values.
 

Fig.3 Test circuit for switching times
 
 
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads                                                      SOT54
 
 
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Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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