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ChongMing Group (HK) Int'l Co., Ltd

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China PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current
China PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current

  1. China PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current

  1. MOQ: 20
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 9500
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 50 V 8 A 330MHz 1 W Surface Mount TP-FA
Collector Cutoff Current <= (--)0.1 µA
Emitter Cutoff Current <= (--)0.1 µA
DC Current Gain 200-560
Gain-Bandwidth Product (290)330 MHz
Brand Name
Model Number 2SC5707
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 9500
Delivery Time 1 day Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 50 V 8 A 330MHz 1 W Surface Mount TP-FA Collector Cutoff Current <= (--)0.1 µA
Emitter Cutoff Current <= (--)0.1 µA DC Current Gain 200-560
Gain-Bandwidth Product (290)330 MHz Brand Name
Model Number 2SC5707 Certification new & original
Place of Origin original factory
High Light power mosfet icmulti emitter transistor

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

 

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

 

Features

• Adoption of FBET and MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

 

Specifications ( ) : 2SA2040

Absolute Maximum Ratings at Ta=25°C

          Parameter   Symbol      Conditions       Ratings    Unit
  Collector-to-Base Voltage    VCBO      --               (--50)100       V
  Collector-to-Emitter Voltage    VCES      --               (--50)100       V
  Collector-to-Emitter Voltage    VCEO      --                  (--)50       V
  Emitter-to-Base Voltage    VEBO      --                  (--)6       V
  Collector Current     IC      --                  (--)8       A
  Collector Current (Pulse)     ICP      --                  (--)11       A
  Base Current     IB      --                  (--)2       A
  Collector Dissipation     PC  

     --

     Tc=25°C

                  1.0

                   15

      W

      W

  Junction Temperature      Tj      --                    150      °C
  Storage Temperature      Tstg      --          --55 to +150      °C

 

Electrical Characteristics at Ta=25°C

         Parameter  Symbol               Conditions   min.    Typ.   max.   unit
  Collector Cutoff Current    ICBO    VCB=(--)40V, IE=0A   --    --   (--)0.1   µA
  Emitter Cutoff Current    IEBO    VEB=(--)4V, IC=0A   --    --   (--)0.1   µA
  DC Current Gain     hFE    VCE=(--)2V, IC=(--)500mA   200    --   560   --
  Gain-Bandwidth Product      fT    VCE=(--)10V, IC=(--)500mA   --  (290)330   --   MHz
  Output Capacitance     Cob    VCB=(--)10V, f=1MHz   --   (50)28   --   pF
  Collector-to-Emitter      Saturation Voltage

 VCE(sat)1

 VCE(sat)2

    IC=(--)3.5A, IB=(--)175mA

    IC=(--)2A, IB=(--)40mA

  --

  --

(--230)160

(--240)110

(--390)240

(--400)170

  mV

  mV

  Base-to-Emitterr Saturation    Voltage   VBE(sat)     IC=(--)2A, IB=(--)40mA   --   (--)0.83   (--)1.2    V
  Collector-to-Base Breakdown  Voltage  V(BR)CBO     IC=(--)10µA, IE=0A (--50)100   --   --    V
  Collector-to-Emitter  Breakdown Voltage  V(BR)CES     IC=(--)100µA, RBE=0Ω (--50)100   --   --    V
  Collector-to-Emitter  Breakdown Voltage  V(BR)CEO     IC=(--)1mA, RBE=∞   (--)50  --   --    V
  Emitter-to-Base Breakdown  Voltage   V(BR)EBO     IE=(--)10µA, IC=0A   (--)6  --   --    V
  Turn-On Time    ton    See specified Test Circuit.   --  (40)30   --   ns
  Storage Time    tstg    See specified Test Circuit.   --  (225)420   --   ns
  Fall Time      tf    See specified Test Circuit.   --       25   --   ns

 

 

  Package Dimensions                                                  Package Dimensions

  unit : mm                                                                        unit : mm

  7518-003                                                                        7003-003

 

 

Switching Time Test Circuit

 

 

 

 

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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