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ChongMing Group (HK) Int'l Co., Ltd

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China 2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet
China 2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

  1. China 2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

  1. MOQ: 5pcs
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union,PayPal
Supply Ability 290PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description Programmable Unijunction Transistor (UJT) 35V 300 mW TO-206AA, TO-18-3 Metal Can
VDGR 300 V
VGSS ±30 V
ID 32 A
Tch 150 °C
Brand Name
Model Number 2N2646
Certification Original Factory Pack
Place of Origin Original

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  1. Product Details
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Product Specification

Payment Terms T/T, Western Union,PayPal Supply Ability 290PCS
Delivery Time 1 Day Packaging Details please contact me for details
Description Programmable Unijunction Transistor (UJT) 35V 300 mW TO-206AA, TO-18-3 Metal Can VDGR 300 V
VGSS ±30 V ID 32 A
Tch 150 °C Brand Name
Model Number 2N2646 Certification Original Factory Pack
Place of Origin Original
High Light power mosfet icsilicon power transistors
2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet

 

 

SILICON UNIJUNCTION TRANSISTORS

Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

 

The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s.

 

ABSOLUTE MAXIMUM RATINGS Tj=125°C unless otherwise noted

Symbol  Ratings 

 2N2646

2N2647 

Unit
VB2E  Emitter-Base2 Voltage  30   V
Ie   RMS Emitter Current   50  mA
ie *  Peak Pulse Emitter Current 2  A
VB2B Interbase Voltage 35   V
PD  RMS power Dissipation 300  mW
TJ  Junction Temperature -65 to +125 °C
TStg  Storage Temperature -65 to +150 °C

 

 

 

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Company Details

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  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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