ChongMing Group (HK) Int'l Co., Ltd
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 8700pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Description | N-Channel 650 V 4.5A (Tc) 31W (Tc) Through Hole PG-TO220-3-31 |
| Drain-source breakdown voltage | 600 V |
| Drain-Source avalanche breakdown voltage | 700 V |
| Gate threshold voltage | 3 V |
| Zero gate voltage drain current (Tj =25°C) | 0.5 µA |
| Gate-source leakage current | 100 nA |
| Gate input resistance | 0.95 Ω |
| Brand Name | |
| Model Number | SPA04N60C3 |
| Certification | new & original |
| Place of Origin | original factory |
View Detail Information
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8700pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Description | N-Channel 650 V 4.5A (Tc) 31W (Tc) Through Hole PG-TO220-3-31 | Drain-source breakdown voltage | 600 V |
| Drain-Source avalanche breakdown voltage | 700 V | Gate threshold voltage | 3 V |
| Zero gate voltage drain current (Tj =25°C) | 0.5 µA | Gate-source leakage current | 100 nA |
| Gate input resistance | 0.95 Ω | Brand Name | |
| Model Number | SPA04N60C3 | Certification | new & original |
| Place of Origin | original factory | ||
| High Light | npn smd transistor ，silicon power transistors | ||
SPP04N60C3, SPB04N60C3
Final data SPA04N60C3
Cool MOSô Power Transistor
| VDS @ Tjmax | 650 | V |
| RDS(on) | 0.95 | Ω |
| ID | 4.5 | A |
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Maximum Ratings
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
|
Continuous drain current TC = 25 °C TC = 100 °C |
ID |
4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
| Avalanche energy, single pulse ID=3.4, VDD=50V | EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V | EAR | 0.4 | 0.4 | mJ |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
|
Drain Source voltage slope |
dv/dt | 50 | V/ns | |
P-TO-220-3-1
P-TO-263-3-2 (D2-PAK)
P-TO-220-3-31 (FullPAK)
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification：
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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