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China factory - ChongMing Group (HK) Int'l Co., Ltd

ChongMing Group (HK) Int'l Co., Ltd

  • China,Shenzhen
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China 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor
China 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

  1. China 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details SOT23-3
Description N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Type MOSFET
Subcategory MOSFETs
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Rds On - Drain-Source Resistance 7.5 Ohms
Vgs th - Gate-Source Threshold Voltage 1 V
Brand Name TI
Model Number 2N7002LT1G

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  1. Product Details
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Product Specification

Payment Terms Paypal, Western Union, TT Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund Packaging Details SOT23-3
Description N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236) Product Type MOSFET
Subcategory MOSFETs Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Rds On - Drain-Source Resistance 7.5 Ohms
Vgs th - Gate-Source Threshold Voltage 1 V Brand Name TI
Model Number 2N7002LT1G
High Light p channel mosfet driver circuitmosfet motor control circuit

2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

 

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

 

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDSS

60

Vdc

Drain−Gate Voltage (RGS = 1.0 MW)

VDGR

60

Vdc

Drain Current
− Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)

ID

ID IDM

± 115 ± 75 ± 800

mAdc

Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)

VGS VGSM

± 20 ± 40

Vdc Vpk 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board (Note 3) TA = 25°C
Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

225 1.8 556

mW mW/°C °C/W

Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

300 2.4 417

mW mW/°C °C/W

Junction and Storage Temperature

TJ, Tstg

− 55 to +150

°C

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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Get in touch with us

  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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