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China M25PE16-VMW6TG linear integrated circuits page - erasable serial flash memory
China M25PE16-VMW6TG linear integrated circuits page - erasable serial flash memory

  1. China M25PE16-VMW6TG linear integrated circuits page - erasable serial flash memory

M25PE16-VMW6TG linear integrated circuits page - erasable serial flash memory

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 50000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description FLASH - NOR Memory IC 16Mbit SPI 75 MHz 8-SO W
Storage temperature –65 to 150 °C
Input and output voltage (with respect to ground) –0.6 to VCC + 0.6 V
Supply voltage –0.6 to 4.0 V
Electrostatic discharge voltage (human body model) –2000 to 2000 V
Ambient operating temperature –40 to 85 °C
Load capacitance 30 pF
Brand Name
Model Number M25PE16-VMW6TG
Certification new & original
Place of Origin original factory

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Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 50000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description FLASH - NOR Memory IC 16Mbit SPI 75 MHz 8-SO W Storage temperature –65 to 150 °C
Input and output voltage (with respect to ground) –0.6 to VCC + 0.6 V Supply voltage –0.6 to 4.0 V
Electrostatic discharge voltage (human body model) –2000 to 2000 V Ambient operating temperature –40 to 85 °C
Load capacitance 30 pF Brand Name
Model Number M25PE16-VMW6TG Certification new & original
Place of Origin original factory
High Light electronic integrated circuitlinear integrated circuits

 

M25PE16

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

 

Features

■ SPI bus compatible serial interface

■ 16-Mbit page-erasable Flash memory

■ Page size: 256 bytes

  – Page write in 11 ms (typical)

  – Page program in 0.8 ms (typical)

  – Page erase in 10 ms (typical)

■ Subsector erase (4 Kbytes)

 

■ Sector erase (64 Kbytes)

■ Bulk erase (16 Mbits)

■ 2.7 V to 3.6 V single supply voltage

■ 75 MHz clock rate (maximum)

■ Deep power-down mode 1 µA (typical)

■ Electronic signature

  – JEDEC standard two-byte signature (8015h)

  – Unique ID code (UID) with 16 bytes readonly, available upon customer request

 

■ Software write protection on a 64-Kbyte sector basis

■ Hardware write protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 write cycles

■ More than 20 years data retention

■ Packages – ECOPACK® (RoHS compliant)

 

 

 

Description

The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle.

 

The memory is organized as 32 sectors that are further divided up into 16 subsectors each (512 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 bytes.

 

The memory can be erased a page at a time, using the page erase instruction, a subsector at a time, using the subsector erase instruction, a sector at a time, using the sector erase instruction, or as a whole, using the bulk erase instruction.

 

The memory can be write protected by either hardware or software using mixed volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).

 

 

 

Maximum rating

Stressing the device above the rating listed in the Absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

 

Symbol Parameter Min. Max. Unit
TSTG Storage Temperature –65 150 °C
TLEAD Lead Temperature during Soldering   (1) °C
VIO Input and Output Voltage (with respect to Ground) –0.6 VCC + 0.6 V
VCC Supply Voltage –0.6 4.0 V
VESD Electrostatic Discharge Voltage (Human Body model) (2) –2000 2000 V

Note:

1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω).

 

 

 

 

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Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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