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ChongMing Group (HK) Int'l Co., Ltd

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China PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate
China PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate

  1. China PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate
  2. China PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate

PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate

  1. MOQ: 3000 PCS
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union , ESCROW
Supply Ability 30000PCS
Delivery Time STOCK
Packaging Details 3000PCS/REEL
Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 500mA 420mW Surface Mount 6-TSOP
Categories Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Brand Name
Model Number PIMN31
Place of Origin Malaysia

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union , ESCROW Supply Ability 30000PCS
Delivery Time STOCK Packaging Details 3000PCS/REEL
Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 500mA 420mW Surface Mount 6-TSOP Categories Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA Brand Name
Model Number PIMN31 Place of Origin Malaysia
High Light resistor equipped transistorepitaxial planar pnp transistor

HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V

 

 

 

Description : 

 

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49291.
The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies
where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids,
relays and contactors. Formerly Developmental Type TA49303.
 
 
Features :
 
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . .340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
 
 
 
 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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