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ChongMing Group (HK) Int'l Co., Ltd

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China RA35H1516M Integrated Circuit Chip 154-162MHz 40W 12.5V MOBILE RADIO crt tv
China RA35H1516M Integrated Circuit Chip 154-162MHz 40W 12.5V MOBILE RADIO crt tv

  1. China RA35H1516M Integrated Circuit Chip 154-162MHz 40W 12.5V MOBILE RADIO crt tv

RA35H1516M Integrated Circuit Chip 154-162MHz 40W 12.5V MOBILE RADIO crt tv

  1. MOQ: 50pcs
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 day
Packaging Details please contact me for details
Drain Voltage 17 V
Gate Voltage 6 V
Input Power 100 mW
Output Power 50 w
Storage Temperature Range -40 to +110 °C
Brand Name MITSUBISHI
Model Number RA35H1516M
Certification Original Factory Pack
Place of Origin Original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,PayPal Supply Ability 5200PCS
Delivery Time 1 day Packaging Details please contact me for details
Drain Voltage 17 V Gate Voltage 6 V
Input Power 100 mW Output Power 50 w
Storage Temperature Range -40 to +110 °C Brand Name MITSUBISHI
Model Number RA35H1516M Certification Original Factory Pack
Place of Origin Original
High Light electronics ic chipintegrated circuit components

RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO crt tv components


DESCRIPTION

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

 

 

 

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

 

 

 

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

 

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V)

• Pout>40W, hT>50% @ VDD=12.5V, VGG=5V, Pin=50mW

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

 

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)

 

 

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Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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