Guangdong Huixin Electronics Technology Co., Ltd.
| Payment Terms | T/T, MoneyGram |
| Supply Ability | 1 billion pieces/ Month |
| Delivery Time | 4-5Weeks |
| Packaging Details | 3000pcs / Reel |
| Type | N-Channel 50-V(D-S) MOSFET |
| Material | Silicon |
| Package | SOT-23 |
| Drain-Source Voltage | 50V |
| Continuous Drain Current | 0.22A |
| Power Dissipation | 0.35W |
| Applications | Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. |
| Features | Rugged and Reliable |
| Brand Name | Huixin |
| Model Number | BSS138 |
| Certification | ISO9001, ISO4001, IATF16949, UL |
| Place of Origin | China |
View Detail Information
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Product Specification
| Payment Terms | T/T, MoneyGram | Supply Ability | 1 billion pieces/ Month |
| Delivery Time | 4-5Weeks | Packaging Details | 3000pcs / Reel |
| Type | N-Channel 50-V(D-S) MOSFET | Material | Silicon |
| Package | SOT-23 | Drain-Source Voltage | 50V |
| Continuous Drain Current | 0.22A | Power Dissipation | 0.35W |
| Applications | Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. | Features | Rugged and Reliable |
| Brand Name | Huixin | Model Number | BSS138 |
| Certification | ISO9001, ISO4001, IATF16949, UL | Place of Origin | China |
| High Light | BSS138 Field Transistor Mosfets ，0.22A Field Transistor Mosfets ，0.35W N Channel Mosfet | ||
| Parameter | Symbol | Value | Unit | ||||||||||||||||||||||||||||||
| Drain-Source Voltage | VDS | 50 | V | ||||||||||||||||||||||||||||||
| Continuous Gate-Source Voltage | VGSS | ±20 | |||||||||||||||||||||||||||||||
| Continuous Drain Current | ID | 0.22 | A | ||||||||||||||||||||||||||||||
| Power Dissipation | PD | 0.35 | W | ||||||||||||||||||||||||||||||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | ||||||||||||||||||||||||||||||
| Operating Temperature | Tj | 150 | ℃ | ||||||||||||||||||||||||||||||
| Storage Temperature | Tstg | -55 ~+150 | |||||||||||||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||||||||||||||||||||||
| Off characteristics | ||||||||||||||||||||||||||||||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 50 | V | ||||||||||||||||||||||||||||||
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||||||||||||||||||||||||||||||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.5 | µA | ||||||||||||||||||||||||||||||
| VDS =30V, VGS =0V | 100 | nA | ||||||||||||||||||||||||||||||||
| On characteristics | ||||||||||||||||||||||||||||||||||
| Gate-threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |||||||||||||||||||||||||||||
| Static drain-source on-resistance (note 1) | RDS(on) | VGS =10V, ID =0.22A | 3.50 | Ω | ||||||||||||||||||||||||||||||
| VGS =4.5V, ID =0.22A | 6 | |||||||||||||||||||||||||||||||||
| Forward transconductance (note 1) | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||||||||||||||||||||||||||||||
| Dynamic characteristics (note 2) | ||||||||||||||||||||||||||||||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||||||||||||||||||||||||||||||
| Output capacitance | Coss | 13 | ||||||||||||||||||||||||||||||||
| Reverse transfer capacitance | Crss | 6 | ||||||||||||||||||||||||||||||||
| Switching characteristics | ||||||||||||||||||||||||||||||||||
| Turn-on delay time (note 1,2) | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 5 | ns | ||||||||||||||||||||||||||||||
| Rise time (note 1,2) | tr | 18 | ||||||||||||||||||||||||||||||||
| Turn-off delay time (note 1,2) | td(off) | 36 | ||||||||||||||||||||||||||||||||
| Fall time (note 1,2) | tf | 14 | ||||||||||||||||||||||||||||||||
| Drain-source body diode characteristics | ||||||||||||||||||||||||||||||||||
| Body diode forward voltage (note 1) | VSD | IS=0.44A, VGS = 0V | 1.4 | V | ||||||||||||||||||||||||||||||
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
2010
Total Annual:
500million-600million
Employee Number:
480~520
Ecer Certification：
Active Member
Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province.... Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province....
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