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China factory - Guangdong Huixin Electronics Technology Co., Ltd.

Guangdong Huixin Electronics Technology Co., Ltd.

  • China,Dongguan ,Guangdong
  • Active Member

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China Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
China Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

  1. China Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
  2. China Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

  1. MOQ: 3000pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T, Paypal, Cash
Supply Ability 1 billion pieces/ Month
Delivery Time 2-4Weeks
Packaging Details 3000pcs / Reel
Type BC3400 N Channel MOSFET
Drain-Source Voltage 30V
Continuous Drain Current 5.8A
MPQ 3000PCS
Sample Time 5-7 Days
Sample Free
Lead Time 2-4Weeks
Lead Free Status RoHS
Brand Name Huixin
Model Number BC3400
Certification ISO9001, ISO4001, IATF16949, UL
Place of Origin China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Paypal, Cash Supply Ability 1 billion pieces/ Month
Delivery Time 2-4Weeks Packaging Details 3000pcs / Reel
Type BC3400 N Channel MOSFET Drain-Source Voltage 30V
Continuous Drain Current 5.8A MPQ 3000PCS
Sample Time 5-7 Days Sample Free
Lead Time 2-4Weeks Lead Free Status RoHS
Brand Name Huixin Model Number BC3400
Certification ISO9001, ISO4001, IATF16949, UL Place of Origin China
High Light 5.8A Low Voltage Mosfet350mW Low Voltage MosfetBC3400 Plastic Encapsulate MOSFETS
 
 
SOT-23 Plastic-Encapsulate MOSFETS

BC3400 N-Channel Enhancement Mode Field Effect Transistor
 
 
BC3400 SOT-23 Datasheet.pdf
 
 
 
FEATURES
 
 
High dense cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
 
 
Maximum ratings ( Ta=25℃ unless otherwise noted)
 
Parameter Symbol Value Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 5.8 A
Drain Current-Pulsed (note 1) IDM 30 A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W
Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
 
Electrical characteristics (Ta=25℃ unless otherwise noted)
 
Parameter Symbol Test Condition Min Typ Max Units
Off Characteristics
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30     V
Zero gate voltage drain current IDSS VDS =24V,VGS = 0V     1 µA
Gate-source leakage current IGSS VGS =±12V, VDS = 0V     ±100 nA
On characteristics
Drain-source on-resistance (note 3) RDS(on) VGS =10V, ID =5.8A     35 mΩ
VGS =4.5V, ID =5A     40 mΩ
Forward tranconductance gFS VDS =5V, ID =5A 8     S
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.7   1.4 V
Dynamic Characteristics (note 4,5)
Input capacitance Ciss VDS =15V,VGS =0V,f =1MHz     1050 pF
Output capacitance Coss   99   pF
Reverse transfer capacitance Crss   77   pF
Gate resistance Rg VDS =0V,VGS =0V,f =1MHz     3.6
Switching Characteristics (note 4,5)
Turn-on delay time td(on) VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω     5 ns
Turn-on rise time tr     7 ns
Turn-off delay time td(off)     40 ns
Turn-off fall time tf     6 ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3) VSD IS=1A,VGS=0V     1 V

 

 
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
 
 
 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Exporter,Seller

  • Year Established:

    2010

  • Total Annual:

    500million-600million

  • Employee Number:

    480~520

  • Ecer Certification:

    Active Member

Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province.... Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province....

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  • Guangdong Huixin Electronics Technology Co., Ltd.
  • Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
  • https://www.fastrectifierdiode.com/

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