Guangdong Huixin Electronics Technology Co., Ltd.
| Payment Terms | T/T, MoneyGram |
| Supply Ability | 1 billion pieces/ Month |
| Delivery Time | 4-5Weeks |
| Packaging Details | 3000pcs / Reel |
| Type | BSS138K N-Channel |
| Material | Silicon |
| Package | SOT-23 |
| Drain-Source Voltage | 50V |
| Continuous Drain Current | 0.22A |
| Power Dissipation | 0.35W |
| MPQ | 3000PCS |
| Features | Rugged and Reliable |
| Brand Name | Huixin |
| Model Number | BSS138K |
| Certification | ISO9001, ISO4001, IATF16949, UL |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T, MoneyGram | Supply Ability | 1 billion pieces/ Month |
| Delivery Time | 4-5Weeks | Packaging Details | 3000pcs / Reel |
| Type | BSS138K N-Channel | Material | Silicon |
| Package | SOT-23 | Drain-Source Voltage | 50V |
| Continuous Drain Current | 0.22A | Power Dissipation | 0.35W |
| MPQ | 3000PCS | Features | Rugged and Reliable |
| Brand Name | Huixin | Model Number | BSS138K |
| Certification | ISO9001, ISO4001, IATF16949, UL | Place of Origin | China |
| High Light | 0.22A Silicon Power MOSFET ，0.35W Silicon Power MOSFET ，BSS138K N Channel MOSFET | ||
| Parameter | Symbol | Limit | Unit | ||||||||||
| Drain-Source Voltage | VDS | 50 | V | ||||||||||
| Gate-Source Voltage | VGS | ±20 | V | ||||||||||
| Drain Current-Continuous | ID | 0.22 | A | ||||||||||
| Drain Current-Pulsed (Note 1) | IDM | 0.88 | A | ||||||||||
| Maximum Power Dissipation | PD | 0.35 | W | ||||||||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | ||||||||||
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | |||||||
| Off Characteristics | |||||||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 50 | 65 | - | V | |||||||
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | - | - | 1 | μA | |||||||
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | - | ±110 | ±500 | nA | |||||||
| VGS=±12V,VDS=0V | - | ±0.3 | ±10 | uA | |||||||||
| On Characteristics (Note 3) | |||||||||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 0.6 | 1.1 | 1.6 | V | |||||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=0.2A | - | 1.3 | 3 | Ω | |||||||
| VGS=10V, ID=0.22A | - | 1 | 2 | Ω | |||||||||
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.2 | - | - | S | |||||||
| Dynamic Characteristics (Note4) | |||||||||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 30 | - | PF | |||||||
| Output Capacitance | Coss | - | 15 | - | PF | ||||||||
| Reverse Transfer Capacitance | Crss | - | 6 | - | PF | ||||||||
| Switching Characteristics (Note 4) | |||||||||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω | - | - | 5 | nS | |||||||
| Turn-on Rise Time | tr | - | - | 5 | nS | ||||||||
| Turn-Off Delay Time | td(off) | - | - | 60 | nS | ||||||||
| Turn-Off Fall Time | tf | - | - | 35 | nS | ||||||||
| Total Gate Charge | Qg | VDS=25V,ID=0.2A, VGS=10V |
- | - | 2.4 | nC | |||||||
| Drain-Source Diode Characteristics | |||||||||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=0.22A | - | - | 1.3 | V | |||||||
| Diode Forward Current (Note 2) | IS | - | - | 0.22 | A | ||||||||
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
2010
Total Annual:
500million-600million
Employee Number:
480~520
Ecer Certification：
Active Member
Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province.... Guangdong Huixin Electronics Technology Co., Ltd. (hereinafter referred to as Huixin ) is specialized in research, production, sales and service of semiconductor devices. Huixin's factory lies in Jiangsu Provicne of China, its management center is in southern China, Guangdong Province....
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