Shanghai GaNova Electronic Information Co., Ltd.
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Type | Laser Diode |
| Application | Laser Printing |
| Package Type | Surface Mount, Standard Package |
| Operating Temperature | 15-55℃ |
| Wavelength | 915nm |
| Emitter Size | 94μm |
| Threshold Current | 0.5A |
| Power Conversion Efficiency | 58% |
| Brand Name | GaNova |
| Place of Origin | Suzhou China |
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Product Specification
| Payment Terms | T/T | Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Type | Laser Diode | Application | Laser Printing |
| Package Type | Surface Mount, Standard Package | Operating Temperature | 15-55℃ |
| Wavelength | 915nm | Emitter Size | 94μm |
| Threshold Current | 0.5A | Power Conversion Efficiency | 58% |
| Brand Name | GaNova | Place of Origin | Suzhou China |
| High Light | 0.5A Laser Diode Chip ，915nm diode chips ，Laser Diode Chip 10W | ||
Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%
915nm 10W COS Diode Laser Chip On Submount Design
On-chip integration of laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%.
The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
| Optical | |
| Center Wavelength | 915nm |
| Output Power | 10W |
| Spectral Width FWHM | ≤6nm |
| Slope Efficiency | 1.0W/A |
| Fast Axis Divergence | 60Deg |
| Slow Axis Divergence | 11Deg |
| Polarization Mode | TE |
| Emitter Size | 94um |
| Electrical | |
| Threshold Current | 0.5A |
| Operating Current | 12A |
| Operating Voltage | 1.65V |
| Power Conversion Efficiency | 58% |
| Thermal | |
| Operating Temperature | 15-55℃ |
| Storage Temperature | -30-70℃ |
| Wavelength Temp. Coefficient | 0.3nm/℃ |
FAQ
Q1: What payment methods do you support?
T/T and Western Union, For your Choice
Q2: How long can I receive the package?
Normally 1-2 Weeks FedEx,DHL Express,UPS,TNT
Q3: What is the lead time?
Standard product are all in stock. Shipping via Express within 3~4 working days. Customized stack need 15 working days.
Q4: Are you trading company or manufacturer?
We are manufacturer with more than 11 years of experience, and also provide the technical solution to all customers.
Q5: Can you guarantee your quality?
Of course, we are one of top reputed manufacturers in China. Quality for us is the most important thing, we put high value on our reputation. Best quality is our principle all the time.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification：
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
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