Delivery Time | 3-4 week days |
Packaging Details | Packaged in a cleanroom in single seed container |
Diameter | 105±0.5mm |
Carrier Type | 500±50μm |
TTV | ≤15μm |
BoW(μm)/Warp(μm) | ≤45 |
Crystal orientation | 4°off-axis toward<11-20>±0.5° |
Main positioning edge lenght | 32.5±2.0 |
Subposition dege length | 18.0±2.0 |
Resistivity | 0.01~0.028Ω·cm |
Model Number | JDZJ01-001-007 |
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Product Specification
Delivery Time | 3-4 week days | Packaging Details | Packaged in a cleanroom in single seed container |
Diameter | 105±0.5mm | Carrier Type | 500±50μm |
TTV | ≤15μm | BoW(μm)/Warp(μm) | ≤45 |
Crystal orientation | 4°off-axis toward<11-20>±0.5° | Main positioning edge lenght | 32.5±2.0 |
Subposition dege length | 18.0±2.0 | Resistivity | 0.01~0.028Ω·cm |
Model Number | JDZJ01-001-007 | ||
High Light | Silicon Carbide Seed Crystal |
JDZJ01-001-007 Silicon Carbide Seed Crystal
Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of bluelight emitting diodes and nearly solar blind UV photodetectors possible.
4&6inch SiC Seed crystal | ||
Grade | S level | S level |
Seed crystal specifications | 6”SiC | 6”SiC |
Diameter(mm) | 105±0.5 | 153±0.5 |
Thickness(μm) | 500±50 | 350±20 or 500±50 |
TTV(μm) | ≤15 | ≤15 |
BoW(μm)/Warp(μm) | ≤45 | ≤60 |
Crystal orientation | 4°off-axis toward<11-20>±0.5° | 4°off-axis toward<11-20>±0.5° |
Main positioning edge lenght | 32.5±2.0 | 18.0±2.0 |
Subposition dege length | 18.0±2.0 | 6.0±2.0 |
Positioning edge direction |
Si face:rotate clockwise along the main positioning side:90°±5° C face:rotate counterclockwise along the main positioning side:90°±5° |
Si face:rotate clockwise along the main positioning side:90°±5° C face:rotate counterclockwise along the main positioning side:90°±5° |
Resistivity | 0.01~0.028Ω·cm | 0.01~0.028Ω·cm |
Surface roughness | SSP,C face polishing,Ra≤1.0nm | DSP,C face Ra≤1.0nm |
Single crystal zone diameter(mm) | ≥102mm | ≥150mm |
Microtubule density | ≤1/cm2 | ≤1/cm2 |
Collapse side | ≤1mm | ≤2mm |
Packaging method | Single piece packing | Single piece packing |
Remark:Single crystal zone refers to the area without crack and polytype. |
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification:
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
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