Shanghai GaNova Electronic Information Co., Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
| Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
| Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
| Dimensions | 50.8 ± 1mm |
| Thickness | 350 ± 25μm |
| Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
| Brand Name | GaNova |
| Model Number | JDCD01-001-019 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
View Detail Information
Explore similar products
Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
2inch Green-LED GaN On Silicon Wafer 520±10nm Good Electrical Resistivity
4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser
A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
Product Specification
| Payment Terms | T/T | Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days | Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates | Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
| Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm | Dimensions | 50.8 ± 1mm |
| Thickness | 350 ± 25μm | Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
| Brand Name | GaNova | Model Number | JDCD01-001-019 |
| Certification | UKAS/ISO9001:2015 | Place of Origin | Suzhou China |
| High Light | Gallium Nitride Semiconductor Wafer ，50.8mm gan substrates ，Semiconductor Wafer 2 Inch | ||
50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer
Overview
GaN Breakdown Field
A higher breakdown field means that gallium nitride is superior over silicon in high voltage circuits such as high-power products. Manufacturers and engineers can also use GaN in similar voltage applications while maintaining a significantly smaller footprint.
| 2-inch Free-standing U-GaN/SI-GaN Substrates | |||||||
|
Excellent level (S) |
Production level(A) | Research level (B) | Dummy level (C) |
Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o | |||
| S-1 | S-2 | A-1 | A-2 | ||||
| Dimensions | 50.8 ± 1 mm | ||||||
| Thickness | 350 ± 25 μm | ||||||
| Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm | ||||||
| Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm | ||||||
| Resistivity (300K) | < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50) | ||||||
| TTV | ≤ 15 μm | ||||||
| BOW | ≤ 20 μm ≤ 40 μm | ||||||
| Ga face surface roughness | < 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) | ||||||
| N face surface roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | ||||||
| Package | Packaged in a cleanroom in single wafer container | ||||||
| Useable area | > 90% | >80% | >70% | ||||
| Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 | ||
| Orientation:C plane (0001) off angle toward M-axis | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | ||||
| Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 | ||||
| Max size of macro defects | < 700 μm | < 2000 μm | < 4000 μm | ||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification：
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
Get in touch with us
Leave a Message, we will call you back quickly!