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Shanghai GaNova Electronic Information Co., Ltd.

  • China,Shanghai ,Shanghai
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China 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
China 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

  1. China 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Epitaxial Wafer
Diameter 150.0mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Orthogonal Misorientation ±5.0°
Edge Exclusion 3mm
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD03-001-003

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Product Specification

Payment Terms T/T Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. Product Name SiC Epitaxial Wafer
Diameter 150.0mm +0mm/-0.2mm Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1° Orthogonal Misorientation ±5.0°
Edge Exclusion 3mm Brand Name GaNova
Certification UKAS/ISO9001:2015 Place of Origin Suzhou China
Model Number JDCD03-001-003
High Light 150.0 mm SiC Epitaxial Wafersilicon carbide wafer 3mmSiC Epitaxial Wafer No Secondary Flat

JDCD03-001-003

 

Overview

SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer.

Today, the semiconductor industry is expanding at a rapid rate, which means that wafer supply is crucial to success. To accommodate the increased demand for SiC semiconductors, chipmakers are increasingly turning to both in-house and external sources to create the necessary silicon and SiC wafers. These in-house sources will help chipmakers realize economies of scale and reduce costs. What is a typical silicon carbide wafer?

 

 

Property

P-MOS Grade P-SBD Grade D Grade
Crystal Form 4H
Polytype None Permitted Area≤5%
(MPD) a ≤0.2 /cm2 ≤0.5 /cm2 ≤5 /cm2
Hex Plates None Permitted Area≤5%
Hexagonal Polycrystal None Permitted
Inclusions a Area≤0.05% Area≤0.05% N/A
Resistivity 0.015Ω•cm—0.025Ω•cm 0.015Ω•cm—0.025Ω•cm 0.014Ω•cm—0.028Ω•cm
(EPD)a ≤4000/cm2 ≤8000/cm2 N/A
(TED)a ≤3000/cm2 ≤6000/cm2 N/A
(BPD)a ≤1000/cm2 ≤2000/cm2 N/A
(TSD)a ≤600/cm2 ≤1000/cm2 N/A
Stacking Fault ≤0.5% Area ≤1% Area N/A

 

Surface Metal Contamination

 

(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2

Diameter 150.0 mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5 mm ± 1.5 mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Secondary Flat Orientation N/A
Orthogonal Misorientation ±5.0°
Surface Finish C-Face:Optical Polish,Si-Face:CMP
Wafer Edge Beveling

Surface Roughness

(10μm×10μm)

Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm
Thickness a 350.0μm± 25.0 μm
LTV(10mm×10mm)a ≤2μm ≤3μm
(TTV)a ≤6μm ≤10μm
(BOW) a ≤15μm ≤25μm ≤40μm
(Warp) a ≤25μm ≤40μm ≤60μm
Chips/Indents None Permitted ≥0.5mm Width and Depth Qty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter

TUA(2mm*2mm) ≥98% ≥95% N/A
Cracks None Permitted
Contamination None Permitted
Property P-MOS Grade P-SBD Grade D Grade
Edge Exclusion 3mm

Remark: 3mm edge exclusion is used for the items marked with a.

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2020

  • Employee Number:

    >100

  • Ecer Certification:

    Verified Supplier

Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...

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Get in touch with us

  • Reach Us
  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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