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China factory - Shanghai GaNova Electronic Information Co., Ltd.

Shanghai GaNova Electronic Information Co., Ltd.

  • China,Shanghai ,Shanghai
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China A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
China A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

  1. China A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name GaN single crystal substrate
Dimensions 5 x 10mm²
Thickness 350 ±25µm
Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2°
TTV ≤ 10µm
BOW - 10µm ≤ BOW ≤ 10µm
Brand Name GaNova
Model Number JDCD01-001-005
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Product Specification

Payment Terms T/T Supply Ability 10000pcs/month
Delivery Time 3-4 week days Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name GaN single crystal substrate Dimensions 5 x 10mm²
Thickness 350 ±25µm Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2°
TTV ≤ 10µm BOW - 10µm ≤ BOW ≤ 10µm
Brand Name GaNova Model Number JDCD01-001-005
Certification UKAS/ISO9001:2015 Place of Origin Suzhou China
High Light N Type gan gallium nitrideGaN Epitaxial Substrate Un DopedA Face gan gallium nitride Substrate

5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer

 


Overview

Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures.

 

A face Free-standing GaN Substrates
Item GaN-FS-A-U-S GaN-FS-A-N-S GaN-FS-A-SI-S

 

 

 

 

 

 

 

 

 

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

A plane (11-20) off angle toward M-axis 0 ±0.5°

A plane (11-20) off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

 

 

Appendix: The diagram of miscut angle

 

If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2020

  • Employee Number:

    >100

  • Ecer Certification:

    Verified Supplier

Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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