Shanghai GaNova Electronic Information Co., Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | Free-standing GaN Substrates |
| Thickness | 350 ±25µm |
| TTV | ≤ 10µm |
| BoW | - 10µm ≤ BOW ≤ 10µm |
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶cm⁻² |
| Macro Defect Density | 0cm⁻² |
| Brand Name | GaNova |
| Model Number | JDCD01-001-018 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days | Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | Free-standing GaN Substrates | Thickness | 350 ±25µm |
| TTV | ≤ 10µm | BoW | - 10µm ≤ BOW ≤ 10µm |
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶cm⁻² | Macro Defect Density | 0cm⁻² |
| Brand Name | GaNova | Model Number | JDCD01-001-018 |
| Certification | UKAS/ISO9001:2015 | Place of Origin | Suzhou China |
| High Light | SP Face Gallium Nitride Substrate ，gallium nitride wafer 350um ，5 x 10.5 mm2 Gallium Nitride Substrate | ||
5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer
Overview
There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in various applications in the Military and for High Power Wireless Infrastructure Applications. GaN on Si is a newer substrate whose performance is not as good as SiC but it is more economical. GaN on Diamond is the best performing, however since it is new and relatively expensive, applications, where this has been used, are limited. We have compared all three GaN Substrates in the table below.
| (20-21)/(20-2-1) face Free-standing GaN Substrates | ||||
| Item | GaN-FS-SP-U-S | GaN-FS-SP-N-S | GaN-FS-SP-SI-S |
Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation | (20-21)/(20-2- 1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2- 1) plane off angle toward C-axis - 1 ±0.2° | |||
| Conduction Type | N-type | N-type | Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness | < 0.2 nm (polished)； or < 0.3 nm (polished and surface treatment for epitaxy) | |||
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then (20-21)/(20-2- 1) plane off angle toward A-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then (20-21)/(20-2- 1) plane off angle toward C-Axis is - 1 ±0.2°.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification：
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
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