Shanghai GaNova Electronic Information Co., Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
| Dimensions | 50.8 ± 1mm |
| Thickness | 350 ± 25μm |
| Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
| Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
| Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
| Brand Name | GaNova |
| Model Number | JDCD01-001-019 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days | Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates | Dimensions | 50.8 ± 1mm |
| Thickness | 350 ± 25μm | Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
| Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm | Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
| Brand Name | GaNova | Model Number | JDCD01-001-019 |
| Certification | UKAS/ISO9001:2015 | Place of Origin | Suzhou China |
| High Light | Single Crystal GaN Epitaxial Wafer ，Un Doped ngle crystal wafer ，GaN Epitaxial Wafer N Type | ||
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer
Overview
High-quality GaN free-standing substrates with low dislocation density suitable for manufacturing laser diodes to be used as light sources for Blu-ray disc drives or projectors.
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.
| 2-inch Free-standing U-GaN/SI-GaN Substrates | |||||||
|
Excellent level (S) |
Production level(A) | Research level (B) | Dummy level (C) |
Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o | |||
| S-1 | S-2 | A-1 | A-2 | ||||
| Dimensions | 50.8 ± 1 mm | ||||||
| Thickness | 350 ± 25 μm | ||||||
| Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm | ||||||
| Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm | ||||||
| Resistivity (300K) | < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50) | ||||||
| TTV | ≤ 15 μm | ||||||
| BOW | ≤ 20 μm ≤ 40 μm | ||||||
| Ga face surface roughness | < 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) | ||||||
| N face surface roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | ||||||
| Package | Packaged in a cleanroom in single wafer container | ||||||
| Useable area | > 90% | >80% | >70% | ||||
| Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 | ||
| Orientation:C plane (0001) off angle toward M-axis | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | ||||
| Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 | ||||
| Max size of macro defects | < 700 μm | < 2000 μm | < 4000 μm | ||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification：
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
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