Shenzhen Res Electronics Limited
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 10000 pcs per month |
| Delivery Time | 1-7work days |
| Packaging Details | original |
| Drain-source resistance | 1.2 Ω |
| Dissipated power | 360 mW |
| threshold voltage | 1.7 V |
| Installation method | Surface Mount |
| pin number | 3 |
| package | SOT-23-3 |
| Packing | Tape & Reel (TR) |
| Brand Name | original |
| Model Number | BSS123 |
| Place of Origin | China |
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Product Specification
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pcs per month |
| Delivery Time | 1-7work days | Packaging Details | original |
| Drain-source resistance | 1.2 Ω | Dissipated power | 360 mW |
| threshold voltage | 1.7 V | Installation method | Surface Mount |
| pin number | 3 | package | SOT-23-3 |
| Packing | Tape & Reel (TR) | Brand Name | original |
| Model Number | BSS123 | Place of Origin | China |
| High Light | Electronic IC Chips 3 Pin ，SOT23 Electronic IC Chips ，Electronic IC Chips | ||
New Original Bss123 Sa Sot23 integrated circuit ic chip
Products Description:
BSS123 N-Channel MOSFET 100V 170mA/0.17A SOT-23/SC-59 marking SA fast switching/logic level compatible
Maximum Source-Drain Voltage Vds Drain-Source Voltage| 100V ---|--- Maximum Gate-Source Voltage Vgs(±) Gate-Source Voltage| 100V Maximum Drain Current Id Drain Current| 170mA/0.17A Source-Drain On-resistanceΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 3.4Ω/Ohm @1.7A,10V Turn-on voltage Vgs(th) Gate-Source Threshold Voltage| 0.8-1.2V Pd Power Dissipation| 360mW/0.36W Description & Applications| N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. Description & Application | N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)=6W@VGS=10V. BSS123: 0.17A, 100V. RDS(ON)=6W@ VGS= 10V High-density battery is designed with extremely low RDS(ON) voltage to control small signal switch.
Technological Parameters:
| Input Capacitance (Ciss) | 73pF @25V(Vds) |
| Drain-source resistance | 1.2 Ω |
| Dissipated power | 360 mW |
| threshold voltage | 1.7 V |
| Drain-Source Voltage (Vds) | 100 V |
| Installation method | Surface Mount |
| pin number | 3 |
| package | SOT-23-3 |
| Operating temperature | -55℃ ~ 150℃ |
| Packing | Tape & Reel (TR) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company,Seller,Other
Year Established:
2000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Since 2000, provide active and passive components, like IC chips,capacitors,resistors, diodes, transistors, and other parts. Original & Brand new parts with timely effective technical support services to meet customers' needs. Business operating markets are designed in multiple countries aro... Since 2000, provide active and passive components, like IC chips,capacitors,resistors, diodes, transistors, and other parts. Original & Brand new parts with timely effective technical support services to meet customers' needs. Business operating markets are designed in multiple countries aro...
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