Payment Terms | T/T, Western Union,PayPal |
Supply Ability | 290PCS |
Delivery Time | 1 Day |
Packaging Details | please contact me for details |
Drain- Source Voltage | -12 V |
Continuous Drain Current, VGS @ -4.5V | -7.4 A |
Pulsed Drain Current | -37 A |
Power Dissipation | 2.0 W |
Linear Derating Factor | 16 mW/°C |
Brand Name | IRF |
Model Number | IRF7329 |
Certification | Original Factory Pack |
Place of Origin | Thailand |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union,PayPal | Supply Ability | 290PCS |
Delivery Time | 1 Day | Packaging Details | please contact me for details |
Drain- Source Voltage | -12 V | Continuous Drain Current, VGS @ -4.5V | -7.4 A |
Pulsed Drain Current | -37 A | Power Dissipation | 2.0 W |
Linear Derating Factor | 16 mW/°C | Brand Name | IRF |
Model Number | IRF7329 | Certification | Original Factory Pack |
Place of Origin | Thailand | ||
High Light | multi emitter transistor ,silicon power transistors |
HEXFET Power Mosfet Transistor , power mosfet module IRF7329
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
Description
New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Parameter | Max. | Units | |
VDS | Drain- Source Voltage | -12 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ -4.5V | -9.2 | A |
ID @ TA= 70°C | Continuous Drain Current, VGS @ -4.5V -7.4 | -7.4 | |
IDM | Pulsed Drain Current | -37 | |
PD @TA = 25°C | Power Dissipation | 2.0 | W |
PD @TA = 70°C | Power Dissipation | 1.3 | |
Linear Derating Factor | 16 | mW/°C | |
VGS | Gate-to-Source Voltage | ± 8.0 | V |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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