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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China 2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor
China 2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

  1. China 2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Gate leakage current ±10 μA
Gate−source breakdown voltage ±30 V
Drain cut−off current 100 μA
Drain−source breakdown voltage 600 V
Gate threshold voltage 2.0 to 4.0 V
Drain−source ON resistance 0.74 Ω
Brand Name Anterwell
Model Number 2SK2996
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7900pcs
Delivery Time 1 day Packaging Details Please contact me for details
Gate leakage current ±10 μA Gate−source breakdown voltage ±30 V
Drain cut−off current 100 μA Drain−source breakdown voltage 600 V
Gate threshold voltage 2.0 to 4.0 V Drain−source ON resistance 0.74 Ω
Brand Name Anterwell Model Number 2SK2996
Certification new & original Place of Origin original factory
High Light npn smd transistorsilicon power transistors

 

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π−MOSV) 2SK2996

 

DC−DC Converter, Relay Drive and Motor Drive Applications

 

Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)

High forward transfer admittance : |Yfs| = 6.8 S (typ.)

Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)

Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 600 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 10 A
Pulse (Note 1) IDP 30
Drain power dissipation (Tc = 25°C) PD 45 W
Single pulse avalanche energy (Note 2) EAS 252 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

   Weight: 1.9 g (typ.)

 

 

 

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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