Payment Terms | T/T, Western Union,PayPal |
Supply Ability | 5200PCS |
Delivery Time | 1 Day |
Packaging Details | please contact me for details |
VDSS | Clamped Vdc |
VDGR | Clamped Vdc |
VGS | ±10 Vdc |
ID | Self–limited 1.8 Adc |
PD | 40 Watts |
Brand Name | MOTOROLA |
Model Number | MLP1N06CLG |
Certification | Original Factory Pack |
Place of Origin | Original |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union,PayPal | Supply Ability | 5200PCS |
Delivery Time | 1 Day | Packaging Details | please contact me for details |
VDSS | Clamped Vdc | VDGR | Clamped Vdc |
VGS | ±10 Vdc | ID | Self–limited 1.8 Adc |
PD | 40 Watts | Brand Name | MOTOROLA |
Model Number | MLP1N06CLG | Certification | Original Factory Pack |
Place of Origin | Original | ||
High Light | multi emitter transistor ,silicon power transistors |
These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.
The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature.
• Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage
• Integrated ESD Diode Protection
• Controlled Switching Minimizes RFI
• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors
MAXIMUM RATINGS
Rating | Symbol | Value | Unit |
Drain–to–Source Voltage | VDSS | Clamped | Vdc |
Drain–to–Gate Voltage (RGS = 1.0 MΩ) | VDGR | Clamped | Vdc |
Gate–to–Source Voltage — Continuous | VGS | ±10 | Vdc |
Drain Current — Continuous Drain Current — Single Pulse | ID IDM | Self–limited 1.8 | Adc |
Total Power Dissipation | PD | 40 | Watts |
Electrostatic Discharge Voltage (Human Body Model) | ESD | 2.0 | kV |
Operating and Storage Junction Temperature Range | TJ, Tstg | –50 to 150 | °C |
STOCK LIST
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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