Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 10000pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Drain−source voltage | 900 V |
| Drain−gate voltage (RGS = 20 kΩ) | 900 V |
| Gate−source voltage | ±30 V |
| Drain power dissipation (Tc = 25°C) | 150 W |
| Single pulse avalanche energy | 663 mJ |
| Avalanche current | 9 A |
| Channel temperature | 150 °C |
| Storage temperature range | −55~150 °C |
| Brand Name | Anterwell |
| Model Number | 2SK2611 |
| Certification | new & original |
| Place of Origin | original factory |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Drain−source voltage | 900 V | Drain−gate voltage (RGS = 20 kΩ) | 900 V |
| Gate−source voltage | ±30 V | Drain power dissipation (Tc = 25°C) | 150 W |
| Single pulse avalanche energy | 663 mJ | Avalanche current | 9 A |
| Channel temperature | 150 °C | Storage temperature range | −55~150 °C |
| Brand Name | Anterwell | Model Number | 2SK2611 |
| Certification | new & original | Place of Origin | original factory |
| High Light | npn smd transistor ，silicon power transistors | ||
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (π−MOSIII) 2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
* Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
* High forward transfer admittance : |Yfs| = 7.0 S (typ.)
* Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Weight: 4.6 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Drain−source voltage | VDSS | 900 | V | |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | 900 | V | |
| Gate−source voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 9 | A |
| Pulse (Note 1) | IDP | 27 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 150 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 663 | mJ | |
| Avalanche current | IAR | 9 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 15 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | −55~150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
| Characteristics | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch−c) | 0.833 | °C / W |
| Thermal resistance, channel to ambient | Rth (ch−a) | 50 | °C / W |
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Marking
Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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