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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China 2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES
China 2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

  1. China 2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

  1. MOQ: 100pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 20000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
collector-base voltage 75 V
collector-emitter voltage 40 V
emitter-base voltage 6 V
collector current (DC) 800 mA
peak collector current 800 mA
operating ambient temperature −65 to +150 °C
Brand Name Anterwell
Model Number 2N2222A
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 20000pcs
Delivery Time 1 day Packaging Details Please contact me for details
collector-base voltage 75 V collector-emitter voltage 40 V
emitter-base voltage 6 V collector current (DC) 800 mA
peak collector current 800 mA operating ambient temperature −65 to +150 °C
Brand Name Anterwell Model Number 2N2222A
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

NPN switching transistors 2N2222; 2N2222A

 

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

 

APPLICATIONS

• Linear amplification and switching.

 

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

 

PINNING

PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case

 

 

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage

2N2222

2N2222A

open emitter

 

-

-

 

60

75

 

V

V

VCEO

collector-emitter voltage

2N2222

2N2222A

open base

 

-

-

 

30

40

 

V

V

VEBO

emitter-base voltage

2N2222

2N2222A

open collector

 

-

-

 

5

6

 

V

V

IC collector current (DC)   - 800 mA
ICM peak collector current   - 800 mA
IBM peak base current   - 200 mA
Ptot total power dissipation Tamb ≤ 25 °C - 500 mW
Tcase ≤ 25 °C - 1.2 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 200 °C
Tamb operating ambient temperature   -65 +150 °C

 

 

 

 

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VNP10N06 2500 ST NEW TO-220
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M27C512-90F1 500 ST NEW DIP28
MPC8248CZQMIBA 100 FREESCAL NEW BGA
VCT6973G-B3-000 500 MICRONAS NEW QFP
PEB20320HV3.4 2000   NEW QFP
TMS320C6701GJC150 300 TI NEW BGA

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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