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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China PMBT3906 Power Mosfet Transistor PNP switching transistor
China PMBT3906 Power Mosfet Transistor PNP switching transistor

  1. China PMBT3906 Power Mosfet Transistor PNP switching transistor

PMBT3906 Power Mosfet Transistor PNP switching transistor

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
collector-base voltage −40 V
collector-emitter voltage −40 V
emitter-base voltage −6 V
collector current −200 mA
peak collector current −200 mA
storage temperature −65 to +150 °C
Brand Name Anterwell
Model Number PMBT3906
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7900pcs
Delivery Time 1 day Packaging Details Please contact me for details
collector-base voltage −40 V collector-emitter voltage −40 V
emitter-base voltage −6 V collector current −200 mA
peak collector current −200 mA storage temperature −65 to +150 °C
Brand Name Anterwell Model Number PMBT3906
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

PMBT3906 PNP switching transistor

 

General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBT3904.

 

Features and benefits „

Collector-emitter voltage VCEO = −40 V „

Collector current capability IC = −200 mA

 

Applications „

General amplification and switching

 

Quick reference data

Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −40 V
IC collector current   - - −200 V

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6 V
IC collector current   - -200 mA
ICM peak collector current   - -200 mA
IBM peak base current   - -100 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Tstg storage temperature   -65 +150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

 

Package outline SOT23 (TO-236AB)

 

 

 

 

Stock Offer (Hot Sell)

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MC78M05CDTX 56000 FAIRCHILD 10+ SOT-252
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MCF51QE128CLK 2655 FREESCALE 13+ QFP80
MCF51QE64CLH 4628 FREESCALE 12+ QFP
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Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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