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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET
China FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

  1. China FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-Source Voltage 30 V
Gate-Source Voltage ± 20 V
Operating Junction Temperature –55 to +150 °C
Storage Temperature –55 to +150 °C
Thermal Resistance, Junction-to-Ambient 78 °C/W
Thermal Resistance, Junction-to-Case 40 °C/W
Brand Name Anterwell
Model Number FDS6990A
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-Source Voltage 30 V Gate-Source Voltage ± 20 V
Operating Junction Temperature –55 to +150 °C Storage Temperature –55 to +150 °C
Thermal Resistance, Junction-to-Ambient 78 °C/W Thermal Resistance, Junction-to-Case 40 °C/W
Brand Name Anterwell Model Number FDS6990A
Certification new & original Place of Origin original factory
High Light power mosfet icmulti emitter transistor

FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET

 

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

 

Features

· 7.5 A, 30 V.    RDS(ON) = 18 mW @ VGS = 10 V

                        RDS(ON) = 23 mW @ VGS = 4.5 V

· Fast switching speed

· Low gate charge

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

 

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 V
ID

Drain Current – Continuous (Note 1a)

– Pulsed

7.5 A
20
PD

Power Dissipation for Single Operation  (Note 1a)

                                                               (Note 1b)

                                                               (Note 1c)

1.6 W
1.0
0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150

 

 

 

 

 

 

Stock Offer (Hot Sell)

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G5V-1-DC9 6255 OMRON 15+ DIP
G5V-2-12VDC 7727 OMRON 14+ DIP
G60N100BNTD 3498 FAIRCHILD 13+ TO-264
G65SC51P-2 6939 CMD 16+ DIP-28
G6K-2F-Y-5VDC 10509 OMRON 13+ SOP-8
GAL16V8D-25LP 5311 LATTICE 16+ DIP-20
GBL08-E3/51 13704 VISHAY 14+ DIP-4
GBPC3508W-E4/51 8669 VISHAY 16+ DIP-4
GBU408 90000 SEP 13+ ZIP-4
GBU6K 14556 LRC 13+ SIP-4
GBU8M 17593 VISHAY 15+ DIP-4
GE865-QUAD 1285 TELIT 14+ GPRS
GIPS20K60 2254 ST 13+ MODULE
GL34A 4000 DIOTEC 13+ DO-213AA
GL41D 20000 GS 13+ LL41
GL852G-MNG12 7574 GENESYS 15+ LQFP-48
GL865 DUAL 1174 TELIT 10+ GPRS
GLL4760-E3/97 24000 VISHAY 10+ NA
GP1S094HCZ0F 5752 SHARP 13+ DIP-4
GS2978-CNE3 2125 GENNUM 15+ QFN16
GS2984-INE3 1336 GENNUM 13+ QFN
GS2988-INE3 6693 GENNUM 16+ QFN16
GS3137-08-TAZ 2008 CONEXANT 09+ TSSOP
GSIB2580-E3/45 4938 VISHAY 16+ GSIB-5S
GSOT03C-GS08 7000 VISHAY 15+ SOT-23
GVA-63+ 8824 MINI 15+ SOT-23
GVA-84+ 4397 MINI 14+ SOT-89
H11AA1SR2M 14966 FAIRCHILD 14+ SOP-6
H11AA4 15037 FAIRCHILD 14+ DIP
H11AG1SR2M 4006 FAIRCHILD 14+ SOP-6

 

 

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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