China factories

China factory - Anterwell Technology Ltd.

Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

Leave a Message

we will call you back quickly!

Submit Requirement
China K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification
China K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

  1. China K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 7700pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Voltage on any pin relative to Vss -0.5 ~ 3.6 V
Storage temperature -55 ~ +150 °C
Power dissipation 1.5 W
Short circuit current 50 mA
Input leakage current -2 to 2 uA
Output leakage current -5 to 5 uA
Brand Name Anterwell
Model Number K4H561638H-UCB3
Certification new & original
Place of Origin original factory

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 7700pcs
Delivery Time 1 day Packaging Details Please contact me for details
Voltage on any pin relative to Vss -0.5 ~ 3.6 V Storage temperature -55 ~ +150 °C
Power dissipation 1.5 W Short circuit current 50 mA
Input leakage current -2 to 2 uA Output leakage current -5 to 5 uA
Brand Name Anterwell Model Number K4H561638H-UCB3
Certification new & original Place of Origin original factory
High Light electronic integrated circuitlinear integrated circuits

 

K4H560438H K4H560838H K4H561638H

256Mb H-die DDR SDRAM Specification

 

66 TSOP-II with Pb-Free (RoHS compliant)

 

Key Features

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

 

• MRS cycle with address key programs

  -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)

  -. Burst length (2, 4, 8)

  -. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

 

• LDM,UDM for write masking only (x16)

• DM for write masking only (x4, x8)

• Auto & Self refresh

• 7.8us refresh interval(8K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II Pb-Free package

• RoHS compliant

 

General Description

The K4H560438H / K4H560838H / K4H561638H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

 

Absolute Maximum Rating

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.5 W
Short circuit current IOS 50 mA

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

 

Package Physical Dimension

 

 

 

 

 

Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
BFS481 9000 15+ SOT363
LS1240AD1013TR 7442 ST 10+ SOP-8
PCA9534PW 12180 TI 16+ TSSOP
PIC18F14K22-I/SO 4678 MICROCHIP 16+ SOP
PIC16F886-I/SS 4783 MICROCHIP 16+ SSOP
LM7824CT 7074 NSC 15+ TO-220
PIC16F88-I/P 4763 MICROCHIP 10+ DIP
MPX5500DP 6113 FREESCALE 15+ SIP
XC9572XL-10PC44C 882 XILINX 10+ PLCC44
L9150 1937 ST 15+ ZIP
XL6019E1 5000 XLSEMI 14+ TO263-5L
NUF6400MNTBG 5200 ON 16+ QFN
M24M02-DRMN6TP 4504 ST 15+ SOP
LM2747MTC 3000 NSC 10+ TSSOP-14
XC2C256-7FT256I 200 XILINX 12+ BGA
LT1963ES8 12062 LT 10+ SOP-8
LP2960IMX-3.3 3651 NSC 15+ SOP-16
40069* 1662 BOSCH 15+ QFP64
LM3812M-7.0 1201 NSC 13+ SOP-8
NLAS4599DFT2 30000 ON 16+ SOT
MMBF170LT1G 25000 ON 16+ SOT-23
MAX6006BESA+ 3527 MAXIM 16+ SOP
MC14528BDR2G 30000 ON 16+ SOP
MSE1PJ-E3/89A 38000 VISHAY 16+ SMD
LM2940CT-12 6960 NSC 15+ TO-220
ZVP4424ZTA 5000 DIODES 12+ TO-89
MCP41010-I/P 5332 MICROCHIP 15+ DIP
MAX4426CPA 13900 MAXIM 16+ DIP
MCP1702T-3302E/MB 10000 MICROCHIP 16+ SOT-89
LM9076SX-3.3 926 NSC 14+ TO-263

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

+ Read More

Get in touch with us

  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement