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China factory - Shenzhen Koben Electronics Co., Ltd.

Shenzhen Koben Electronics Co., Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5
China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

  1. China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5
  2. China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5
  3. China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

  1. MOQ: 1 piece
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000 pieces per year
Delivery Time 1-2 working days
Packaging Details factory standard packing
Condition 100% Brand New Product
Part Status Active
Package NI1230
Lead Free Status / RoHS Status Compliant
Output Power 600W
Voltage 50V
Brand Name Freescale
Model Number MRFE6VP5600HR5
Certification IEC
Place of Origin USA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 10000 pieces per year
Delivery Time 1-2 working days Packaging Details factory standard packing
Condition 100% Brand New Product Part Status Active
Package NI1230 Lead Free Status / RoHS Status Compliant
Output Power 600W Voltage 50V
Brand Name Freescale Model Number MRFE6VP5600HR5
Certification IEC Place of Origin USA
High Light high power mosfet transistorsn channel mosfet transistor

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230

 

 

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz

 

Features

1, Unmatched Input and Output Allowing Wide Frequency Range Utilization

2, Device can be used Single--Ended or in a Push--Pull Configuration

3, Qualified Up to a Maximum of 50 VDD Operation

4, Characterized from 30 V to 50 V for Extended Power Range

5, Suitable for Linear Application with Appropriate Biasing

6, Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation

7, Characterized with Series Equivalent Large--Signal Impedance Parameters

8, RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12.

Transistor Type LDMOS (Dual)  
Frequency 230MHz  
Gain 25dB  
Voltage - Test 50V  
Current Rating -  
Noise Figure -  
Current - Test 100mA  
Power - Output 600W  
Voltage - Rated 130V  
Package / Case NI-1230  
Supplier Device Package NI-1230  
Base Part Number

MRFE6VP5600

 

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Company Details

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  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    1995

  • Ecer Certification:

    Site Member

  Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...   Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...

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  • Shenzhen Koben Electronics Co., Ltd.
  • C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
  • https://www.bomsourcing.com/

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