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China factory - Shenzhen Koben Electronics Co., Ltd.

Shenzhen Koben Electronics Co., Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB
China N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB

  1. China N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB

N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms Western Union, T/T,Paypal
Supply Ability Consultation
Delivery Time 2-3 working days
Packaging Details 98PCS/Standard Package
FET Type N-Channel
Drain to Source Voltage 55V
Power Dissipation 200W
Operating Temperature -55°C ~ 175°C
Brand Name IOR
Model Number IRF3205PBF
Certification ROHS
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms Western Union, T/T,Paypal Supply Ability Consultation
Delivery Time 2-3 working days Packaging Details 98PCS/Standard Package
FET Type N-Channel Drain to Source Voltage 55V
Power Dissipation 200W Operating Temperature -55°C ~ 175°C
Brand Name IOR Model Number IRF3205PBF
Certification ROHS Place of Origin CHINA
High Light high power mosfet transistorsn channel mosfet transistorN Channel Mosfet Power Transistor

IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C

 

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Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    1995

  • Ecer Certification:

    Site Member

  Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...   Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen.    The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...

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  • Shenzhen Koben Electronics Co., Ltd.
  • C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
  • https://www.bomsourcing.com/

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