Shenzhen Koben Electronics Co., Ltd.
| Payment Terms | Western Union, T/T,Paypal |
| Supply Ability | Consultation |
| Delivery Time | 2-3 working days |
| Packaging Details | 800PCS/Standard Package |
| FET Type | N-Channel |
| Drain to Source Voltage | 100V |
| Operating Temperature | -55°C ~ 175°C |
| Brand Name | IOR |
| Model Number | IRF540NS |
| Certification | ROHS |
| Place of Origin | CHINA |
View Detail Information
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Product Specification
| Payment Terms | Western Union, T/T,Paypal | Supply Ability | Consultation |
| Delivery Time | 2-3 working days | Packaging Details | 800PCS/Standard Package |
| FET Type | N-Channel | Drain to Source Voltage | 100V |
| Operating Temperature | -55°C ~ 175°C | Brand Name | IOR |
| Model Number | IRF540NS | Certification | ROHS |
| Place of Origin | CHINA | ||
| High Light | high power mosfet transistors ，n channel mosfet transistor ，Mosfet Power Transistor IRF540NS | ||
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching
| Features |
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Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
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| Description |
|
Advanced HEXFET® Power MOSFETs from
|
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International Rectifier utilize advanced processing
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techniques to achieve extremely low on-resistance per
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silicon area. This benefit, combined with the fast
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switching speed and ruggedized device design that
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HEXFET power MOSFETs are well known for, provides
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the designer with an extremely efficient and reliable
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device for use in a wide variety of applications.
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The D2Pak is a surface mount power package capable of
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accommodating die sizes up to HEX-4. It provides the
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highest power capability and the lowest possible on-
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resistance in any existing surface mount package. The
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D2Pak is suitable for high current applications because of
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its low internal connection resistance and can dissipate up
|
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to 2.0W in a typical surface mount application.
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The through-hole version (IRF540NL) is available for low-
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profile applications.
|
Product Attributes
| FET Type | N-Channel |
| Technology | MOSFET |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
Company Details
Business Type:
Distributor/Wholesaler
Year Established:
1995
Ecer Certification：
Site Member
Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc... Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...
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