Shanghai Juyi Electronic Technology Development Co., Ltd
| Packaging Details | PE bag+ carton |
| Delivery Time | 5-10 days |
| Payment Terms | T/T,L/C,Paypal |
| Supply Ability | 1000sets/day |
| Drain-Source Voltage | 100 V |
| Gate-Source Voltage | ±20V |
| Maximum Power Dissipation | 210W |
| Pulsed Drain Current | 395A |
| High Voltage | Yes |
| reverse body recovery | Yes |
| Brand Name | JUYI |
| Model Number | JY11M |
| Place of Origin | China |
View Detail Information
Explore similar products
JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet
‐40V/‐70A P Channel Enhancement Mode Power MOSFET JY4P7M for High Current Load
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
JUYI Tech 450mA / 850mA Mosfet High Side Switch , 3.3V Logic Compatible Bldc
Product Specification
| Packaging Details | PE bag+ carton | Delivery Time | 5-10 days |
| Payment Terms | T/T,L/C,Paypal | Supply Ability | 1000sets/day |
| Drain-Source Voltage | 100 V | Gate-Source Voltage | ±20V |
| Maximum Power Dissipation | 210W | Pulsed Drain Current | 395A |
| High Voltage | Yes | reverse body recovery | Yes |
| Brand Name | JUYI | Model Number | JY11M |
| Place of Origin | China | ||
| High Light | pwm mosfet driver ，mosfet stepper driver | ||
JY11M N Channel Enhancement Mode Power MOSFET
GENERAL DESCRIPTION
The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | ± 20 | V | |
| ID | Continuous Drain Current | Tc=25ºC | 110 | A |
| Tc=100ºC | 82 | |||
| IDM | Pulsed Drain Current | 395 | A | |
| PD | Maximum Power Dissipation | 210 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 0.65 | ºC/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250uA | 100 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=± 20V,VDS=0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V,IDS=40A | 6.5 | mΩ | ||
| gFS | Forward Transconductance | VDS=50V, IDS=40A | 100 | S |
DOWNLOAD JY11M USER MANUAL
Company Details
Business Type:
Manufacturer
Year Established:
2010
Total Annual:
5000000-10000000
Employee Number:
100~200
Ecer Certification：
Verified Supplier
Shanghai Juyi Electronic Technology Development Co., Ltd established in 2010, Its a high-tech enterprise specializing in research, development, production and sales of brushless motor controller products. Its headquarters and research and development base are established in international economy, fi... Shanghai Juyi Electronic Technology Development Co., Ltd established in 2010, Its a high-tech enterprise specializing in research, development, production and sales of brushless motor controller products. Its headquarters and research and development base are established in international economy, fi...
Get in touch with us
Leave a Message, we will call you back quickly!